IBE

Product main Functions:

1. The sample stage is equipped with heating and tilting functions. The temperature control range is 5°C to 40°C, with a temperature control resolution of up to 0.1°C; the tilting range is 0° to 60°, with an angular resolution of up to 1°.

2. The equipment can process wafer substrates with a maximum size of 8 inches, and the substrates are compatible with various materials such as Si (silicon), SiO₂ (silicon dioxide), SiNₓ (silicon nitride), and metal Cr (chromium).

3. Taking silicon dioxide as an example, the etching rate can reach 60 nm/min.

4. The etching uniformity on 8-inch wafers is better than ±5%.

5. The equipment is configured with control software, which can store no less than 100 sets of process parameters and has an automatic RF (radio frequency) matching adjustment function.

Product main technical parameters：